Preparation and dielectric properties of BaBi 1.8 Ln 0.2 Nb 2 O 9 (Ln = Ce, Gd) ceramics

Mohamed Afqir (1, 2) , Amina Tachafine (1) , Didier Fasquelle (1) , Mohamed Elaatmani (2) , Jean-Claude Carru (1) , Abdelouahad Zegzouti (2) , Mohamed Daoud (2)

1 UDSMM - Unité de Dynamique et Structure des Matériaux Moléculaires
2 UCA - Université Cadi Ayyad [Marrakech]

The main subject of the presented research is to investigate the dielectric properties of BaBi 1.8 Ln 0.2 Nb 2 O 9 (Ln = Ce, Gd) ceramics prepared by conventional solid state reaction route. The materials were examined using XRD and FT-IR methods. Moreover, the AC conductivity, dielectric constant and dielectric loss of the ceramics were determined. X-ray diffraction confirmed that all these compounds crystallize in an orthorhombic structure. Fourier transform infrared spectroscopy study confirmed the presence of two characteristic vibration bands located at around 617 cm -1 and 818 cm -1 for BaBi 2 Nb 2 O 9 . The experimental results show that the substitution of Bi by Ce or Gd causes a decrease in Curie temperature, dielectric constant and dielectric loss.

Mots clés: BaBi2Nb2O9; structure; dielctrics; BaBi 2 Nb 2 O 9 structure dielctrics; BaBi 2 Nb 2 O 9

Domaines: Physique [physics]

Mohamed Afqir, Amina Tachafine, Didier Fasquelle, Mohamed Elaatmani, Jean-Claude Carru, et al.. Preparation and dielectric properties of BaBi 1.8 Ln 0.2 Nb 2 O 9 (Ln = Ce, Gd) ceramics. Materials Science-Poland, 2018, 36 (1), pp.46-50. ⟨10.1515/msp-2018-0027⟩. ⟨hal-04465484⟩